We have measured the transition process from the high to low resistivitystates, i.e., the reset process of resistive switching based memristors basedon Ni/HfO2/Si-n+ structures, and have also developed an analytical model fortheir electrical characteristics. When the characteristic curves are plotted inthe current-voltage (I-V) domain a high variability is observed. In spite ofthat, when the same curves are plotted in the charge-flux domain (Q-f), theycan be described by a simple model containing only three parameters: the charge(Qrst) and the flux (frst) at the reset point, and an exponent, n, relating thecharge and the flux before the reset transition. The three parameters can beeasily extracted from the Q-f plots. There is a strong correlation betweenthese three parameters, the origin of which is still under study.
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